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PRELIMINARY DATA SHEET
NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR
FEATURES
* * * HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16
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DESCRIPTION
NEC's NESG2101M16 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes:
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NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX
PARAMETERS AND CONDITIONS Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain3 at VCE = 2 V, IC = 15 mA
RF
1. MSG = S21 S12 2. Collector to base capacitance when the emitter pin is grounded. 3. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
California Eastern Laboratories
NESG2101M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS UNITS V V V mA mW C C RATINGS 13.0 5.0 1.5 100 190 150 -65 to +150 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M16 6-PIN LEAD-LESS MINIMOLD
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
1.00.05 0.8+0.07 -0.05
0.150.05
0.125+0.1 -0.05
1
0.4
Hz
1.2+0.07 -0.05
2
0.8
0.4
3
ORDERING INFORMATION
PART NUMBER QUANTITY SUPPLYING FORM
0.50.05
NESG2101M16-T3-A 10 K pcs reel
Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
PIN CONNECTIONS 4. Base 1. Collector 5. Emitter 2. Emitter 6. Emitter 3. Emitter
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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11/13/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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